AOU3N50
MOSFET N-CH 500V 2.8A TO251-3Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOU3N50 is an N-channel MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 2.8 A at 25°C (Tc). With a maximum power dissipation of 57 W (Tc), it is suitable for demanding power conversion tasks. The device exhibits a typical Rds On of 3 Ohms at 1.5 A and 10 V, and a gate charge (Qg) of 8 nC at 10 V. Input capacitance (Ciss) is specified at a maximum of 331 pF at 25 V. The AOU3N50 is housed in a TO-251-3 (IPAK) package with short leads and is designed for through-hole mounting. This MOSFET is commonly utilized in power supply units, lighting, and industrial control systems. Operating temperature range is -50°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 331 pF @ 25 V |
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