AOU2N60A
MOSFET N-CH 600V 2A TO251-3Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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This Alpha & Omega Semiconductor Inc. N-Channel MOSFET, part number AOU2N60A, is designed for high voltage applications. It features a 600 V breakdown voltage (Vdss) and a continuous drain current (Id) of 2 A at 25°C. The device offers a low on-resistance (Rds On) of 4.7 Ohms maximum at 1 A and 10 V gate-source voltage, with a gate charge (Qg) of 11 nC maximum. The input capacitance (Ciss) is rated at 295 pF maximum at 25 V. Packaged in a TO-251-3 (IPAK) configuration with through-hole mounting, this MOSFET supports a maximum power dissipation of 57 W at a case temperature of 25°C. Its operating temperature range is -50°C to 150°C. This component is suitable for use in power supply, lighting, and industrial control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 295 pF @ 25 V |
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