AOTF9N90
MOSFET N-CH 900V 9A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOTF9N90 is an N-Channel Power MOSFET designed for high-voltage applications. This device features a Drain-Source Voltage (Vdss) of 900V and a continuous Drain Current (Id) of 9A at 25°C. With a maximum power dissipation of 50W (Tc) and a low on-resistance (Rds On) of 1.3 Ohm at 4.5A and 10V Vgs, the AOTF9N90 is suitable for demanding power conversion circuits. The TO-220F package facilitates through-hole mounting. Key parameters include a gate charge (Qg) of 58 nC at 10V and an input capacitance (Ciss) of 2560 pF at 25V. Operating temperature ranges from -55°C to 150°C (TJ). This component finds application in power supplies, industrial motor control, and lighting systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2560 pF @ 25 V |
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