AOTF9N50
MOSFET N-CH 500V 9A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOTF9N50 is an N-Channel Power MOSFET designed for robust performance in demanding applications. This device features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 9A at 25°C. The on-resistance (Rds On) is specified at a maximum of 850mOhm at 4.5A and 10V gate drive. With a maximum power dissipation of 38.5W at 25°C (Tc), it is suitable for power conversion and management circuits. Key parameters include a gate charge (Qg) of 28nC @ 10V and input capacitance (Ciss) of 1042pF @ 25V. The TO-220F package facilitates through-hole mounting, and the device operates across a wide temperature range of -55°C to 150°C. This component finds application in power supplies, motor control, and lighting systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38.5W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1042 pF @ 25 V |
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