AOTF8N65
MOSFET N-CH 650V 8A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOTF8N65 is a 650V N-Channel MOSFET designed for high-voltage applications. This device features a continuous drain current rating of 8A at 25°C (Tc) and a maximum power dissipation of 50W (Tc). With a low on-resistance of 1.15 Ohms at 4A and 10V, and a gate charge of 28 nC, it is suitable for power switching in various industrial sectors including power supplies and lighting. The TO-220F package facilitates through-hole mounting. Key parameters include a Vgs(th) of 4.5V (max) at 250µA and an input capacitance (Ciss) of 1400 pF (max) at 25V. The operational temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.15Ohm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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