AOTF8N60
MOSFET N-CH 600V 8A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOTF8N60 is a N-Channel MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 8A at 25°C. With a maximum power dissipation of 50W (Tc) and an Rds(On) of 900mOhm at 4A and 10V, it is suitable for demanding power conversion tasks. Key parameters include a Gate Charge (Qg) of 35 nC @ 10 V and an Input Capacitance (Ciss) of 1370 pF @ 25 V. The AOTF8N60 utilizes Through Hole mounting and comes in a TO-220F package. This device is commonly found in power supply units, lighting, and industrial motor control applications. The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 25 V |
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