AOTF7T60P
MOSFET N-CH 600V 7A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. N-Channel MOSFET, part number AOTF7T60P. This TO-220F packaged power MOSFET features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 7A at 25°C. With a maximum on-resistance (Rds On) of 1.1 Ohm at 3.5A and 10V Vgs, and a gate charge (Qg) of 25 nC, this device is suitable for applications requiring efficient switching. It offers a power dissipation of 38W at 25°C (Tc) and operates across a temperature range of -55°C to 150°C. Commonly found in power supply units and industrial motor control, this component utilizes Metal Oxide technology.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 965 pF @ 100 V |
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