AOTF7S65
MOSFET N-CH 650V 7A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Alpha & Omega Semiconductor Inc. aMOS™ series AOTF7S65 is a 650V N-Channel power MOSFET designed for high-efficiency switching applications. This component features a continuous drain current capability of 7A at 25°C and a maximum power dissipation of 35W. With a low on-resistance of 650mOhm at 3.5A and 10V Vgs, it minimizes conduction losses. The device boasts a gate charge of 9.2 nC and an input capacitance of 434 pF, facilitating fast switching speeds. Housed in a TO-220F package, the AOTF7S65 is suitable for through-hole mounting and operates across a wide temperature range from -55°C to 150°C. This MOSFET is commonly employed in power supply units, lighting, and industrial automation systems.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 434 pF @ 100 V |
Request a Quote
Clients Also Buy
AOB27S60L
MOSFET N-CH 600V 27A TO263
AOD4S60
MOSFET N-CH 600V 4A TO252
AOTF15S60L
MOSFET N-CH 600V 15A TO220-3F
