AOTF7S60L
MOSFET N-CH 600V 7A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. presents the AOTF7S60L, an N-Channel MOSFET from the aMOS™ series. This component features a 600V drain-to-source breakdown voltage and a continuous drain current capability of 7A at 25°C. The device offers a maximum on-resistance of 600mOhm at 3.5A and 10V gate-source voltage. With a gate charge of 8.2 nC at 10V and input capacitance of 372 pF at 100V, it is suitable for power management applications. The AOTF7S60L is housed in a TO-220F package with a maximum power dissipation of 34W. Operating temperature ranges from -55°C to 150°C. This MOSFET finds application in power supplies, lighting, and industrial motor control.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 34W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 372 pF @ 100 V |
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