AOTF7N65
MOSFET N-CH 650V 7A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOTF7N65 is a 650V N-Channel MOSFET designed for efficient power conversion applications. This device features a continuous drain current of 7A (Tc) at 25°C and a maximum power dissipation of 38.5W (Tc). The Rds(On) is specified at a maximum of 1.56 Ohms at 3.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 23 nC @ 10 V and input capacitance (Ciss) of 1060 pF @ 25 V. With a Vgs(th) of 4.5V @ 250µA and a maximum Vgs of ±30V, it offers robust gate control. The TO-220F packaged component is suitable for through-hole mounting and operates across a wide temperature range of -55°C to 150°C. This MOSFET is utilized in industries such as industrial power supplies, lighting, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.56Ohm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38.5W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 25 V |
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