AOTF7N60FD
MOSFET N-CH 600V 7A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOTF7N60FD is an N-Channel Power MOSFET designed for applications requiring high voltage and efficient switching. This device features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 7A at 25°C, with a maximum power dissipation of 39W (Tc). The Rds On specification is 1.45 Ohms maximum at 3.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 25 nC maximum at 10V and input capacitance (Ciss) of 995 pF maximum at 25V. The TO-220F package with through-hole mounting is suitable for demanding thermal environments. Typical applications include power supplies, lighting, and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.45Ohm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 39W (Tc) |
| Vgs(th) (Max) @ Id | 4.2V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 995 pF @ 25 V |
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