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AOTF7N60

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AOTF7N60

MOSFET N-CH 600V 7A TO220-3F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOTF7N60, an N-Channel MOSFET, offers a 600V drain-source voltage and 7A continuous drain current at 25°C. This through-hole component features a maximum on-resistance of 1.2 Ohm at 3.5A and 10V, with a gate charge of 28 nC at 10V. The device is supplied in a TO-220F package, facilitating efficient heat dissipation with a maximum power dissipation of 38.5W (Tc). Key parameters include input capacitance (Ciss) of 1035 pF at 25V and a gate-source threshold voltage (Vgs(th)) of 4.5V at 250µA. This MOSFET is suitable for applications in power supply and industrial automation sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Rds On (Max) @ Id, Vgs1.2Ohm @ 3.5A, 10V
FET Feature-
Power Dissipation (Max)38.5W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1035 pF @ 25 V

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