AOTF6N90
MOSFET N-CH 900V 6A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOTF6N90 is an N-Channel MOSFET designed for high voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 900 V and a continuous drain current (Id) of 6 A at 25°C. The Rds On is specified at a maximum of 2.2 Ohms at 3 A and 10 V, with a gate charge (Qg) of 35 nC at 10 V. Input capacitance (Ciss) is rated at 1450 pF at 25 V. This device has a maximum power dissipation of 50W and is packaged in a TO-220F through-hole configuration. The operating temperature range is -55°C to 150°C. This MOSFET is suitable for power supply and industrial applications requiring robust high-voltage switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 25 V |
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