AOTF600A60L
MOSFET N-CH 600V 8A TO220FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. aMOS5™ series N-Channel Power MOSFET, part number AOTF600A60L, offers a 600V drain-to-source voltage and a continuous drain current of 8A at 25°C. This TO-220F packaged device features a maximum on-resistance (Rds On) of 600mOhm at 2.1A and 10V Vgs, with a gate charge (Qg) of 11.5 nC at 10V. Typical applications include power factor correction, switch mode power supplies, and LED lighting. The MOSFET operates within an ambient temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 27.5W (Tc). Key parameters include an input capacitance (Ciss) of 608 pF at 100V and a gate-source threshold voltage (Vgs(th)) of 3.5V at 250µA.
Additional Information
Series: aMOS5™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tj) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 27.5W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 608 pF @ 100 V |
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