AOTF5N100
MOSFET N-CH 1000V 4A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOTF5N100 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 1000 V and a continuous drain current (Id) of 4 A at 25°C. The device offers a low on-resistance (Rds On) of 4.2 Ohms at 2.5 A, 10 V, and a maximum power dissipation of 42 W (Tc). Key parameters include a gate charge (Qg) of 23 nC at 10 V and an input capacitance (Ciss) of 1150 pF at 25 V. The AOTF5N100 is housed in a TO-220F package, suitable for through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is utilized in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 25 V |
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