AOTF4T60P
MOSFET N-CH 600V 4A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOTF4T60P is an N-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 4A at 25°C. With a maximum Power Dissipation (Pd) of 35W (Tc), it is suitable for high-power switching and power management circuits. The device exhibits a typical Rds On of 2.1 Ohm at 2A and 10V gate drive, with a specified Gate Charge (Qg) of 15 nC at 10V. Input Capacitance (Ciss) is rated at 522 pF at 100V. The AOTF4T60P is housed in a TO-220F package, facilitating through-hole mounting. This MOSFET is commonly utilized in power supplies, industrial motor control, and lighting applications. Operating temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 522 pF @ 100 V |
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