AOTF4N90
MOSFET N-CH 900V 4A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOTF4N90 is a 900V N-Channel MOSFET designed for high-voltage applications. This component offers a continuous drain current of 4A at 25°C (Tc) with a power dissipation of 37W (Tc). Featuring a low on-resistance of 3.6 Ohms maximum at 2A and 10V Vgs, it minimizes conduction losses. The AOTF4N90 has a gate charge of 22 nC maximum at 10V and an input capacitance of 880 pF maximum at 25V. Packaged in a TO-220F through-hole configuration, this MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is suitable for use in power supply, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 25 V |
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