AOTF42S60L
MOSFET N-CH 600V 39A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. aMOS™ N-Channel Power MOSFET, AOTF42S60L, offers a 600V drain-source voltage and 39A continuous drain current at 25°C. This device features a low Rds(on) of 99mOhm maximum at 21A and 10V Vgs, with a gate charge of 40nC maximum at 10V. The input capacitance (Ciss) is 2154pF maximum at 100V. Designed with a TO-220F package for through-hole mounting, it has a maximum power dissipation of 37.9W at 25°C and operates across a temperature range of -55°C to 150°C. This component is widely utilized in power supply units, industrial motor control, and solar inverters.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37.9W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2154 pF @ 100 V |
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