AOTF3N90
MOSFET N-CH 900V 2.4A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOTF3N90 is a high-voltage N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 900 V and a continuous drain current (Id) of 2.4 A at 25°C (Tc), with a maximum power dissipation of 35 W (Tc). The AOTF3N90 is housed in a TO-220F package, facilitating through-hole mounting. Key electrical parameters include a maximum on-resistance (Rds On) of 6.7 Ohms at 1.5 A and 10 V, a gate charge (Qg) of 16 nC at 10 V, and input capacitance (Ciss) of 540 pF at 25 V. The gate-source voltage (Vgs) tolerance is ±30 V, with a threshold voltage (Vgs(th)) of 4.5 V at 250 µA. Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for use in power supply units, lighting, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.7Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 25 V |
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