AOTF3N80
MOSFET N-CH 800V 2.8A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. presents the AOTF3N80, an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 800V and a continuous drain current (Id) of 2.8A at 25°C. With a maximum Rds(on) of 4.8 Ohms at 1.5A and 10V Vgs, it offers efficient switching characteristics. The device is packaged in a TO-220F through-hole configuration and supports a maximum power dissipation of 35W at the case temperature. Key parameters include an input capacitance (Ciss) of 510pF and a gate charge (Qg) of 10nC at 10V Vgs. The operating temperature range is from -55°C to 150°C. This MOSFET is suitable for use in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
Request a Quote
Clients Also Buy
AONV110A60
N
AOK065A60FD
LINEAR IC
AOSP66406
N
