AOTF3N50
MOSFET N-CH 500V 3A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AOTF3N50 N-Channel MOSFET. This TO-220F packaged device features a 500V drain-source breakdown voltage and a continuous drain current of 3A at 25°C. With a maximum power dissipation of 31W (Tc) and an Rds(on) of 3 Ohms at 1.5A and 10V, it is suitable for various power switching applications. Key parameters include a gate charge (Qg) of 8 nC @ 10V and input capacitance (Ciss) of 331 pF @ 25V. The operating temperature range is -55°C to 150°C. This component is commonly utilized in power supply units, lighting, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 331 pF @ 25 V |
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