AOTF3N100
MOSFET N-CH 1000V 2.8A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AOTF3N100 is an N-Channel MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 1000 V and a continuous Drain Current (Id) of 2.8 A at 25°C (Tc). The device offers a maximum power dissipation of 38 W (Tc) and a low on-resistance (Rds On) of 6 Ohm at 1.5 A and 10 V gate drive. Key characteristics include a Gate Charge (Qg) of 20 nC at 10 V and an Input Capacitance (Ciss) of 830 pF at 25 V. The AOTF3N100 is housed in a TO-220F package for through-hole mounting and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply circuits, lighting, and motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 25 V |
Request a Quote
Clients Also Buy
AONV110A60
N
AOK065A60FD
LINEAR IC
AOSP66406
N
