AOTF2N60L
MOSFET N-CH 600V 2A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOTF2N60L is an N-Channel MOSFET designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 2 A at 25°C. With a maximum power dissipation of 31 W (Tc), it is suitable for demanding power management tasks. The Rds On is specified at 4.4 Ohm maximum at 1 A, 10 V, and the Gate Charge (Qg) is a maximum of 11.4 nC at 10 V. Input capacitance (Ciss) is 325 pF maximum at 25 V. Mounting is via through-hole in a TO-220F package. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 25 V |
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