AOTF2N60
MOSFET N-CH 600V 2A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. presents the AOTF2N60, an N-Channel Power MOSFET designed for robust switching applications. This device features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 2A at 25°C (Tc). With a maximum on-resistance (Rds On) of 4.4 Ohms at 1A and 10V gate-source voltage, it offers efficient power handling with a maximum power dissipation of 31W (Tc). The AOTF2N60 utilizes MOSFET technology and is housed in a TO-220F (TO-220-3 Full Pack) through-hole package. Key parameters include a gate charge (Qg) of 11.4 nC @ 10V and input capacitance (Ciss) of 325 pF @ 25V. This component is suitable for applications in power supplies, industrial automation, and lighting control systems. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 25 V |
Request a Quote
Clients Also Buy
AONS520A70
N
AONV110A60
N
AOK065A60FD
LINEAR IC
