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AOTF2N60

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AOTF2N60

MOSFET N-CH 600V 2A TO220-3F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. presents the AOTF2N60, an N-Channel Power MOSFET designed for robust switching applications. This device features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 2A at 25°C (Tc). With a maximum on-resistance (Rds On) of 4.4 Ohms at 1A and 10V gate-source voltage, it offers efficient power handling with a maximum power dissipation of 31W (Tc). The AOTF2N60 utilizes MOSFET technology and is housed in a TO-220F (TO-220-3 Full Pack) through-hole package. Key parameters include a gate charge (Qg) of 11.4 nC @ 10V and input capacitance (Ciss) of 325 pF @ 25V. This component is suitable for applications in power supplies, industrial automation, and lighting control systems. It operates within a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Rds On (Max) @ Id, Vgs4.4Ohm @ 1A, 10V
FET Feature-
Power Dissipation (Max)31W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds325 pF @ 25 V

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