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AOTF298L

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AOTF298L

MOSFET N-CH 100V 9A/33A TO220-3F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AOTF298L, features a 100V drain-source voltage and a continuous drain current capability of 9A at ambient temperature (Ta) and 33A at case temperature (Tc). This TO-220F packaged device offers a low on-resistance of 14.5mOhm at 20A and 10V gate-source voltage. Key parameters include a maximum gate charge (Qg) of 27nC and input capacitance (Ciss) of 1670pF at 15V. The device supports a maximum gate-source voltage of ±20V and a threshold voltage (Vgs(th)) of 4.1V. Power dissipation is rated at 2.1W (Ta) and 33W (Tc). Operating temperature range is -55°C to 175°C. This component is suitable for applications in power conversion and industrial motor control.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs14.5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id4.1V @ 250µA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1670 pF @ 15 V

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