AOTF298L
MOSFET N-CH 100V 9A/33A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AOTF298L, features a 100V drain-source voltage and a continuous drain current capability of 9A at ambient temperature (Ta) and 33A at case temperature (Tc). This TO-220F packaged device offers a low on-resistance of 14.5mOhm at 20A and 10V gate-source voltage. Key parameters include a maximum gate charge (Qg) of 27nC and input capacitance (Ciss) of 1670pF at 15V. The device supports a maximum gate-source voltage of ±20V and a threshold voltage (Vgs(th)) of 4.1V. Power dissipation is rated at 2.1W (Ta) and 33W (Tc). Operating temperature range is -55°C to 175°C. This component is suitable for applications in power conversion and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 33W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1670 pF @ 15 V |
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