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AOTF2918L

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AOTF2918L

MOSFET N-CH 100V 13A/58A TO220F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AOTF2918L is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 13A at ambient temperature (Ta), increasing to 58A at case temperature (Tc). With a low On-Resistance (Rds On) of 7mOhm at 20A and 10V, it minimizes conduction losses. The AOTF2918L is packaged in a TO-220F through-hole configuration, offering a maximum power dissipation of 2.1W (Ta) or 41W (Tc). Key parameters include a Gate Charge (Qg) of 53 nC and Input Capacitance (Ciss) of 3430 pF, both specified at 10V and 50V respectively. Its operating temperature range is -55°C to 175°C. This device is suitable for use in power supplies, motor control, and automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs7mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id3.9V @ 250µA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3430 pF @ 50 V

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