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AOTF262L

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AOTF262L

MOSFET N-CH 60V 17.5A/85A TO220

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. presents the AOTF262L, an N-Channel MOSFET designed for demanding applications. This component offers a 60V drain-to-source voltage (Vdss) and boasts impressive current handling capabilities, rated at 17.5A continuous drain current at ambient temperature (Ta) and 85A at case temperature (Tc). The device features a low on-resistance (Rds On) of 3.6mOhm maximum at 20A and 10V Vgs. Key characteristics include a gate charge (Qg) of 135 nC maximum at 10V and an input capacitance (Ciss) of 8140 pF maximum at 30V Vds. With a maximum power dissipation of 2.1W (Ta) and 50W (Tc), this MOSFET operates efficiently across a wide temperature range from -55°C to 175°C (TJ). The AOTF262L is housed in a TO-220F package, suitable for through-hole mounting. Typical industries utilizing this component include power supply, automotive, and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17.5A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs3.6mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id3.2V @ 250µA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8140 pF @ 30 V

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