AOTF262L
MOSFET N-CH 60V 17.5A/85A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. presents the AOTF262L, an N-Channel MOSFET designed for demanding applications. This component offers a 60V drain-to-source voltage (Vdss) and boasts impressive current handling capabilities, rated at 17.5A continuous drain current at ambient temperature (Ta) and 85A at case temperature (Tc). The device features a low on-resistance (Rds On) of 3.6mOhm maximum at 20A and 10V Vgs. Key characteristics include a gate charge (Qg) of 135 nC maximum at 10V and an input capacitance (Ciss) of 8140 pF maximum at 30V Vds. With a maximum power dissipation of 2.1W (Ta) and 50W (Tc), this MOSFET operates efficiently across a wide temperature range from -55°C to 175°C (TJ). The AOTF262L is housed in a TO-220F package, suitable for through-hole mounting. Typical industries utilizing this component include power supply, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.5A (Ta), 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 3.2V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8140 pF @ 30 V |
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