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AOTF260L

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AOTF260L

MOSFET N-CH 60V 19A/92A TO220-3F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOTF260L is an N-Channel MOSFET designed for high-efficiency power switching applications. This TO-220F packaged device features a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 19A at 25°C ambient, and 92A at 25°C case temperature. The AOTF260L offers a low on-resistance (Rds On) of 2.6mOhm maximum at 20A and 10V Vgs, enabling reduced conduction losses. Its maximum power dissipation is rated at 1.9W ambient and 46.5W at 25°C case temperature. Key parameters include a gate charge (Qg) of 210 nC maximum at 10V Vgs and input capacitance (Ciss) of 11800 pF maximum at 30V Vds. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for use in power supplies, motor control, and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C19A (Ta), 92A (Tc)
Rds On (Max) @ Id, Vgs2.6mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)1.9W (Ta), 46.5W (Tc)
Vgs(th) (Max) @ Id3.2V @ 250µA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds11800 pF @ 30 V

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