AOTF25S65
MOSFET N-CH 650V 25A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. aMOS™ series N-Channel MOSFET, part number AOTF25S65, offers a 650V drain-source voltage and 25A continuous drain current at 25°C (Tc). This through-hole device features a TO-220F package and dissipates up to 50W (Tc). Key parameters include a maximum Rds(on) of 190mOhm at 12.5A and 10V, and a gate charge of 26.4 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 1278 pF at 100V. This device is suitable for applications in power supplies and industrial automation. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 26.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1278 pF @ 100 V |
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