AOTF22N50
MOSFET N-CH 500V 22A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AOTF22N50 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a 500 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 22A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 260 mOhm at 11A and 10V gate drive. With a gate charge (Qg) of 83 nC and input capacitance (Ciss) of 3710 pF, it is suitable for power switching applications. The device offers a maximum power dissipation of 50W (Tc) and operates within a temperature range of -55°C to 150°C. Packaged in a TO-220F through-hole configuration, the AOTF22N50 is commonly utilized in power supplies, industrial automation, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3710 pF @ 25 V |
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