AOTF2210L
MOSFET N-CH 200V 6.5A/13A TO220Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AOTF2210L. This TO-220F packaged device features a maximum drain-source voltage (Vdss) of 200V. It offers continuous drain current (Id) ratings of 6.5A at ambient temperature (Ta) and 13A at case temperature (Tc). The typical Rds On is 90mOhm at 13A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 40 nC at 10V and input capacitance (Ciss) of 2065 pF at 100V. Maximum power dissipation is 8.3W (Ta) and 36.5W (Tc). This component is suitable for applications in power supplies and general purpose switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta), 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 8.3W (Ta), 36.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2065 pF @ 100 V |
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