AOTF20S60L
MOSFET N-CH 600V 20A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. aMOS™ series N-Channel MOSFET, part number AOTF20S60L, offers a 600V breakdown voltage and a continuous drain current of 20A at 25°C. This TO-220F packaged device features a maximum power dissipation of 37.8W at the case temperature. Key electrical parameters include a maximum Rds(on) of 199mOhm at 10A and 10V, and a gate charge of 19.8 nC at 10V. Input capacitance (Ciss) is specified at 1038 pF at 100V. The operating temperature range is -55°C to 150°C. This component is suitable for applications in power supply, industrial, and automotive sectors.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 199mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37.8W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 19.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1038 pF @ 100 V |
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