AOTF20N60
MOSFET N-CH 600V 20A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOTF20N60 is a 600V N-Channel MOSFET designed for high-efficiency power switching applications. This device features a continuous drain current capability of 20A (Tc) and a maximum power dissipation of 50W (Tc). The AOTF20N60 exhibits a low on-resistance of 370mOhm at 10A, 10V, facilitated by its 10V gate drive. Key parameters include a gate charge (Qg) of 74 nC at 10V and input capacitance (Ciss) of 3680 pF at 25V. The component is housed in a TO-220F package for through-hole mounting. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power supplies, motor control, and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 370mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3680 pF @ 25 V |
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