Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

AOTF20C60P

Banner
productimage

AOTF20C60P

MOSFET N-CH 600V 20A TO220-3F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOTF20C60P is a 600V N-channel Power MOSFET designed for high-efficiency power conversion applications. This device features a continuous drain current capability of 20A at 25°C (Tc) and a maximum power dissipation of 50W (Tc). With a low on-resistance of 250mOhm at 10A and 10V, it minimizes conduction losses. The gate charge (Qg) is rated at 80 nC maximum at 10V, and input capacitance (Ciss) is 3607 pF maximum at 100V. The AOTF20C60P utilizes MOSFET technology and is housed in a TO-220F package, suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ). This component is commonly found in industrial power supplies, lighting, and motor control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs250mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3607 pF @ 100 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
AO4266

MOSFET N-CH 60V 10A 8SO

product image
AONV070V65G1

GAN

product image
AOL1432

MOSFET N-CH 25V 12A/44A ULTRASO8