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AOTF190A60L

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AOTF190A60L

MOSFET N-CH 600V 20A TO220F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. aMOS5™ series N-Channel MOSFET, part number AOTF190A60L, offers a 600V drain-to-source voltage rating. This TO-220F packaged device features a continuous drain current of 20A at 25°C and a maximum power dissipation of 32W at 25°C. Key electrical characteristics include a maximum Rds On of 190mOhm at 7.6A and 10V, and a gate charge of 34 nC at 10V. Input capacitance (Ciss) is specified at 1935 pF at 100V, with a threshold voltage (Vgs(th)) of 4.6V at 250µA. This component is suitable for applications in power supply, industrial, and consumer electronics sectors. Operating temperature range is -55°C to 150°C.

Additional Information

Series: aMOS5™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Rds On (Max) @ Id, Vgs190mOhm @ 7.6A, 10V
FET Feature-
Power Dissipation (Max)32W (Tc)
Vgs(th) (Max) @ Id4.6V @ 250µA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1935 pF @ 100 V

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