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AOTF18N65L

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AOTF18N65L

MOSFET N-CH 650V 18A TO220-3F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOTF18N65L is an N-Channel MOSFET designed for high-voltage applications. This component features a Drain to Source Voltage (Vdss) of 650V and a Continuous Drain Current (Id) of 18A at 25°C. The AOTF18N65L offers a low On-Resistance (Rds On) of 390mOhm at an Id of 9A and Vgs of 10V, with a Gate Charge (Qg) of 68nC at 10V. Its input capacitance (Ciss) is rated at 3785pF maximum at 25V. The device is housed in a TO-220F package, suitable for through-hole mounting. With a maximum power dissipation of 50W (Tc), it is engineered for reliable operation across an extended temperature range of -55°C to 150°C (TJ). This MOSFET is utilized in power supply units, lighting, and industrial motor control applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Rds On (Max) @ Id, Vgs390mOhm @ 9A, 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3785 pF @ 25 V

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