AOTF18N65
MOSFET N-CH 650V 18A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. N-Channel MOSFET, part number AOTF18N65. This TO-220F packaged device features a 650V drain-source voltage (Vdss) and a continuous drain current of 18A at 25°C (Tc). The AOTF18N65 offers a maximum on-resistance (Rds On) of 390mOhm at 9A and 10V gate-source voltage. With a gate charge (Qg) of 68nC at 10V and an input capacitance (Ciss) of 3785pF at 25V, this MOSFET is suitable for applications requiring high voltage switching. Key parameters include a maximum power dissipation of 50W (Tc) and an operating temperature range of -55°C to 150°C. The device is commonly utilized in power supply designs, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 390mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3785 pF @ 25 V |
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