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AOTF18N65

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AOTF18N65

MOSFET N-CH 650V 18A TO220-3F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. N-Channel MOSFET, part number AOTF18N65. This TO-220F packaged device features a 650V drain-source voltage (Vdss) and a continuous drain current of 18A at 25°C (Tc). The AOTF18N65 offers a maximum on-resistance (Rds On) of 390mOhm at 9A and 10V gate-source voltage. With a gate charge (Qg) of 68nC at 10V and an input capacitance (Ciss) of 3785pF at 25V, this MOSFET is suitable for applications requiring high voltage switching. Key parameters include a maximum power dissipation of 50W (Tc) and an operating temperature range of -55°C to 150°C. The device is commonly utilized in power supply designs, industrial motor control, and lighting applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Rds On (Max) @ Id, Vgs390mOhm @ 9A, 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3785 pF @ 25 V

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