AOTF15S60
MOSFETManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Alpha & Omega Semiconductor Inc. aMOS™ series N-Channel MOSFET, part number AOTF15S60, is designed for high-voltage applications. This through-hole component features a 600V drain-source voltage (Vdss) and supports a continuous drain current of 15A at 25°C (Tc). With a maximum power dissipation of 27.8W (Tc), it offers a typical on-resistance (Rds On) of 290mOhm at 7.5A and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 15.6 nC and input capacitance (Ciss) of 717 pF at specified Vgs and drain-source voltages, respectively. The device operates across a temperature range of -55°C to 150°C (TJ) and is housed in a TO-220F package. This MOSFET is suitable for use in power supply, lighting, and industrial applications.
Additional Information
Series: aMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 27.8W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 717 pF @ 100 V |
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