AOTF13N50
MOSFET N-CH 500V 13A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. MOSFET N-Channel AOTF13N50. This device features a 500 V drain-to-source voltage (Vdss) and a continuous drain current of 13A (Tc) at 25°C. The AOTF13N50 offers a maximum on-resistance (Rds On) of 510mOhm at 6.5A and 10V gate-source voltage. Designed with a TO-220F package for through-hole mounting, this component has a maximum power dissipation of 50W (Tc). Key parameters include a gate charge (Qg) of 37 nC at 10 V and input capacitance (Ciss) of 1633 pF at 25 V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supply, lighting, and industrial motor control sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 510mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1633 pF @ 25 V |