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AOTF12T60PL

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AOTF12T60PL

MOSFET N-CH 600V 12A TO220-3F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AOTF12T60PL, offers a 600V drain-source breakdown voltage (Vdss) and a continuous drain current of 12A at 25°C (Tc). This TO-220F packaged device features a maximum on-resistance (Rds On) of 520mOhm at 6A and 10V Vgs, with a gate charge (Qg) of 50nC at 10V. Its input capacitance (Ciss) is rated at 2028pF maximum at 100V. The device supports a gate-source voltage range of ±30V and has a threshold voltage (Vgs(th)) of 5V at 250µA. With a maximum power dissipation of 35W (Tc), it is suitable for applications in power supply, lighting, and industrial motor control. The AOTF12T60PL operates across a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs520mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)35W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2028 pF @ 100 V

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