AOTF12T60P
MOSFET N-CH 600V 12A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. offers the AOTF12T60P, an N-Channel MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 12A at 25°C. With a maximum Power Dissipation of 50W (Tc), it is suitable for demanding power conversion tasks. The AOTF12T60P exhibits a high on-resistance of 520mOhm at 6A and 10V, and a gate charge of 50 nC at 10V. It is packaged in a TO-220F (TO-220-3 Full Pack) through-hole configuration. This device finds application in power supplies, industrial motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ) with a maximum Gate-Source Voltage of ±30V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2028 pF @ 100 V |
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