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AOTF12T60P

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AOTF12T60P

MOSFET N-CH 600V 12A TO220-3F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. offers the AOTF12T60P, an N-Channel MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 12A at 25°C. With a maximum Power Dissipation of 50W (Tc), it is suitable for demanding power conversion tasks. The AOTF12T60P exhibits a high on-resistance of 520mOhm at 6A and 10V, and a gate charge of 50 nC at 10V. It is packaged in a TO-220F (TO-220-3 Full Pack) through-hole configuration. This device finds application in power supplies, industrial motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ) with a maximum Gate-Source Voltage of ±30V.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs520mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2028 pF @ 100 V

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