AOTF12T60
MOSFET N-CH 600V 12A TO220FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOTF12T60 is a 600V N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a continuous drain current of 12A at 25°C and a maximum power dissipation of 50W (Tc). With a low Rds(on) of 520mOhm at 6A and 10V, it offers reduced conduction losses. The TO-220F package provides robust thermal performance and is suitable for through-hole mounting. Key parameters include a gate charge of 50 nC at 10V and input capacitance of 1954 pF at 100V. Suitable for industrial power supplies, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1954 pF @ 100 V |
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