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AOTF12T50PL

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AOTF12T50PL

MOSFET N-CH 500V 12A TO220-3F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. N-Channel MOSFET, AOTF12T50PL. This device features a 500V drain-source breakdown voltage (Vdss) and supports a continuous drain current (Id) of 12A at 25°C. The AOTF12T50PL offers a maximum on-resistance (Rds On) of 500mOhm at 6A and 10V gate-source voltage. Key parameters include a 32 nC maximum gate charge (Qg) at 10V and 1477 pF input capacitance (Ciss) at 100V. With a maximum power dissipation of 33W at 25°C (Tc), this MOSFET utilizes a TO-220F package for through-hole mounting. Operating temperature range is -55°C to 150°C. This component is suitable for applications in power supply and industrial systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs500mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)33W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1477 pF @ 100 V

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