AOTF12T50P
MOSFET N-CH 500V 12A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. presents the AOTF12T50P, an N-Channel Power MOSFET. This through-hole component features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 12A at 25°C with a maximum power dissipation of 43W (Tc). The Rds On is specified at 500mOhm maximum for an Id of 6A and Vgs of 10V. Key parameters include a Gate Charge (Qg) of 32 nC at 10V and Input Capacitance (Ciss) of 1477 pF at 100V. The device operates within an ambient temperature range of -55°C to 150°C and is housed in a TO-220F package. This MOSFET is suitable for applications in power supply units and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 43W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1477 pF @ 100 V |
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