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AOTF12N60

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AOTF12N60

MOSFET N-CH 600V 12A TO220-3F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOTF12N60 is an N-Channel Power MOSFET designed for demanding applications. This component features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C (Tc), with a maximum power dissipation of 50W (Tc). The AOTF12N60 offers a low on-resistance (Rds On) of 550mOhm at 6A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 50 nC at 10V and an input capacitance (Ciss) of 2100 pF at 25V. Packaged in a TO-220F through-hole configuration, this MOSFET operates across a temperature range of -55°C to 150°C. It is suitable for use in power supply, lighting, and industrial motor drive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs550mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2100 pF @ 25 V

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