AOTF12N60
MOSFET N-CH 600V 12A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOTF12N60 is an N-Channel Power MOSFET designed for demanding applications. This component features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C (Tc), with a maximum power dissipation of 50W (Tc). The AOTF12N60 offers a low on-resistance (Rds On) of 550mOhm at 6A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 50 nC at 10V and an input capacitance (Ciss) of 2100 pF at 25V. Packaged in a TO-220F through-hole configuration, this MOSFET operates across a temperature range of -55°C to 150°C. It is suitable for use in power supply, lighting, and industrial motor drive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 25 V |