AOTF11S65L
MOSFET N-CH 650V 11A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. aMOS™ N-Channel Power MOSFET, part number AOTF11S65L, is engineered for high-voltage applications. This TO-220F packaged device offers a Drain-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 11A at 25°C (Tc). Key electrical characteristics include a maximum On-Resistance (Rds On) of 399mOhm at 5.5A and 10V, and a gate charge (Qg) of 13.2 nC at 10V. The input capacitance (Ciss) is specified at a maximum of 646 pF at 100V. With a maximum power dissipation of 31W (Tc), this MOSFET is suitable for demanding power conversion and control circuits. The operating temperature range is -55°C to 150°C (TJ). This component finds application in power supplies, lighting, and industrial automation sectors.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 399mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 646 pF @ 100 V |
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