AOTF11S60L
MOSFET N-CH 600V 11A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. aMOS™ series N-Channel Power MOSFET, part number AOTF11S60L. This device features a 600V drain-source voltage rating and a continuous drain current capability of 11A at 25°C. With a maximum power dissipation of 38W (Tc), it is housed in a TO-220F package for through-hole mounting. Key parameters include a maximum Rds(on) of 399mOhm at 3.8A and 10V, an input capacitance (Ciss) of 545pF at 100V, and a gate charge (Qg) of 11nC at 10V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power supply, lighting, and motor drive industries.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 399mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 545 pF @ 100 V |
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