AOTF11N62L
MOSFET N-CH 620V 11A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. MOSFET N-Channel, part number AOTF11N62L, is a power transistor designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 620V and a continuous Drain Current (Id) of 11A at 25°C (Tc). With a maximum power dissipation of 39W (Tc), it is suitable for demanding power conversion tasks. The N-Channel MOSFET offers a typical Rds On of 650mOhm at 5.5A and 10V, with a Gate Charge (Qg) of 37 nC at 10V. Input capacitance (Ciss) is specified at 1990 pF maximum at 25V. Packaged in a TO-220F (TO-220-3 Full Pack) through-hole configuration, this device operates across a temperature range of -55°C to 150°C (TJ). Industries utilizing this component include industrial power supplies and lighting.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 39W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 620 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 pF @ 25 V |
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