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AOTF11N62

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AOTF11N62

MOSFET N-CH 620V 11A TO220-3F

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AOTF11N62 is an N-Channel Power MOSFET designed for high-voltage applications. This device features a drain-source voltage (Vdss) of 620V and a continuous drain current (Id) of 11A at 25°C. The AOTF11N62 offers a maximum on-resistance (Rds On) of 650mOhm at 5.5A and 10V gate drive. With a maximum power dissipation of 50W at 25°C case temperature, it is suitable for demanding power conversion and switching circuits. The component utilizes MOSFET technology and is housed in a TO-220F package, facilitating through-hole mounting. Key electrical parameters include a gate charge (Qg) of 37nC at 10V and input capacitance (Ciss) of 1990pF at 25V. This component is commonly employed in industrial power supplies, lighting, and consumer electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Rds On (Max) @ Id, Vgs650mOhm @ 5.5A, 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-220F
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)620 V
Gate Charge (Qg) (Max) @ Vgs37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1990 pF @ 25 V

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