AOTF11N60L
MOSFET N-CH 600V 11A TO220-3FManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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This Alpha & Omega Semiconductor Inc. N-Channel MOSFET, part number AOTF11N60L, features a 600 V drain-source voltage and a continuous drain current of 11A at 25°C. With a maximum power dissipation of 37.9W at 25°C and a low on-resistance of 650mOhm at 5.5A and 10V Vgs, this device is suitable for power switching applications. The TO-220F package with through-hole mounting facilitates integration into various circuit designs. Key parameters include a gate charge of 37 nC at 10 V, input capacitance of 1990 pF at 25 V, and a threshold voltage of 4.5V at 250µA. The operating temperature range is from -55°C to 150°C. This component is commonly utilized in power supplies, LED lighting, and industrial motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37.9W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 pF @ 25 V |
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